PRECISE QUANTIZED HALL RESISTANCE MEASUREMENTS IN GAAS/ALXGA1-XAS AND INXGA1-XAS/INP HETEROSTRUCTURES

被引：54
|
作者：
DELAHAYE, F
DOMINGUEZ, D
ALEXANDRE, F
ANDRE, JP
HIRTZ, JP
RAZEGHI, M
机构：
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
[2] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
[3] THOMSON CSF,CENT RECH LAB,F-91401 ORSAY,FRANCE
来源：
METROLOGIA | 1986年 / 22卷 / 02期
关键词：
D O I：
10.1088/0026-1394/22/2/005
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
HALL EFFECT
引用
收藏
页码：103 / 110
页数：8
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