ULTRAVIOLET PHOTOSULFIDATION OF III-V COMPOUND SEMICONDUCTORS - A NEW APPROACH TO SURFACE PASSIVATION

被引：14
|
作者：
ASHBY, CIH
ZAVADIL, KR
HOWARD, AJ
HAMMONS, BE
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期
关键词：
D O I：
10.1063/1.111623
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new passivation technique for III-V compound semiconductors based on ultraviolet photolysis of elemental sulfur vapor has been developed. Photosulfidation produces a greater increase in the photoluminescence intensity from GaAs samples than that produced by conventional (NH4)2S dip treatments and is more photostable than the conventional wet process. X-ray photoelectron spectroscopy of the photosulfided GaAs surfaces indicate formation of a surface sulfide rather than the disulfide characteristic of the (NH4)2S process.
引用
收藏
页码：2388 / 2390
页数：3
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