CRYOGENIC VOLTAGE-SENSITIVE PREAMPLIFIER USING GAAS-MESFETS OF LOW 1/F NOISE

被引：23

作者：

ALESSANDRELLO, A

BROFFERIO, C

CAMIN, DV

GIULIANI, A

PESSINA, G

PREVITALI, E

机构：

[1] UNIV MILAN,DEPARTIMENTO FIS,I-20133 MILAN,ITALY

[2] NATL INST NUCL PHYS,MILAN,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1990年 / 295卷 / 03期

关键词：

D O I：

10.1016/0168-9002(90)90720-Q

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A voltage-sensitive preamplifier using GaAs MESFETs of low 1 f{hook} noise has been developed. The voltage gain is fixed to 51. With a total power dissipation of 54 mW the preamplifier's series noise level at 4 K is 9 nV/Hz 1 2 at 100 Hz and 0.3 nV/Hz 1 2 at 100 kHz. The input bias current of the preamplifier was determined to be lower than 10 fA below 100 K. Response to a step pulse gave a rise time of 40 ns when loaded with a 130 pF load. The voltage-sensitive preamplifier is presently used in Milano for signal readout and characterization of large-mass bolometric particle detectors. An energy resolution of 13 keV for the 1330 keV of a 60Co gamma source was obtained with an 11 g Ge bolometric detector readout with this preamplifier. © 1990.

引用

页码：405 / 410

页数：6

共 5 条

[1] GALLIUM-ARSENIDE CHARGE-SENSITIVE PREAMPLIFIER FOR OPERATION IN A WIDE LOW-TEMPERATURE RANGE [J].