NONEXPONENTIAL RELAXATION OF CONDUCTANCE NEAR SEMICONDUCTOR INTERFACES

被引：101
作者：
QUEISSER, HJ
机构：
来源：
PHYSICAL REVIEW LETTERS | 1985年 / 54卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.54.234
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：234 / 236
页数：3
相关论文
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