共 36 条
[2]
BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
[J].
PHYSICAL REVIEW,
1968, 176 (03)
:993-&
[3]
Brooks H., 1955, ADVAN ELECTRON ELECT, V7, P158
[4]
DRISCOLL CMH, 1972, DEFECTS SEMICONDUCTO, P377
[6]
GARRARD B, TO BE PUBLISHED
[8]
INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
[J].
PHYSICAL REVIEW A-GENERAL PHYSICS,
1964, 133 (3A)
:A866-&
[10]
EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS
[J].
PHYSICAL REVIEW,
1969, 180 (03)
:827-&