VLSI TECHNOLOGY AND DIELECTRIC FILM SCIENCE

被引:5
作者
FEIGL, FJ
机构
关键词
D O I
10.1063/1.881068
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:47 / 54
页数:8
相关论文
共 14 条
[1]  
CHU WK, 1978, BACKSCATTERING SPECT, P243
[2]  
DAVIS JR, 1981, INSTABILITIES MOS DE
[3]   DIRECT OBSERVATION OF THE THRESHOLD FOR ELECTRON HEATING IN SILICON DIOXIDE [J].
DIMARIA, DJ ;
FISCHETTI, MV ;
TIERNEY, E ;
BRORSON, SD .
PHYSICAL REVIEW LETTERS, 1986, 56 (12) :1284-1286
[4]  
FEIGL FJ, 1983, MATERIALS PROCESS CH, V6, P147
[5]   THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].
FISCHETTI, MV ;
DIMARIA, DJ ;
BRORSON, SD ;
THEIS, TN ;
KIRTLEY, JR .
PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142
[6]   THE PHILLIPS,J.C. MODEL FOR VITREOUS SIO2 - A CRITICAL-APPRAISAL [J].
GALEENER, FL ;
WRIGHT, AC .
SOLID STATE COMMUNICATIONS, 1986, 57 (08) :677-682
[7]  
GRUNTHANER PJ, 1979, PHYS REV LETT, V43, P1638
[8]   PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].
HOLLINGER, G ;
HIMPSEL, FJ .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95
[9]  
KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356
[10]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO