PROBING THE COULOMB GAP IN INSULATING N-TYPE CDSE

被引：0
作者：
ZHANG, YZ
DAI, PH
LEVY, M
SARACHIK, MP
机构：
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 22期
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D O I：
10.1103/PhysRevLett.64.2687
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the first observation of a crossover with decreasing temperature of the resistivity of a doped semiconductor from the expT0/T)1/4 behavior characteristic of Mott variable-range hopping to the exp(T0/T)1/2 form expected in the presence of a Coulomb gap. Simultaneous determination of T0 and T0 for several dopant concentrations yields the empirical relation T0/T0p, with p23. If current theory is valid and applicable, this has unexpected implications regarding the critical behavior of the localization length and the dielectric constant at the metal-insulator transition. © 1990 The American Physical Society © 1990 The American Physical Society.
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页码：2687 / 2690
页数：4
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