DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE

被引：80
|
作者：
GREINER, ME [1 ]
GIBBONS, JF [1 ]
机构：
[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期
关键词：
D O I：
10.1063/1.335253
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5181 / 5191
页数：11
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