DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE

被引：80

作者：

GREINER, ME ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5181 / 5191

页数：11

共 50 条

[31] INTERFACIAL ELECTRICAL-PROPERTIES OF DIAMOND-LIKE CARBON GALLIUM-ARSENIDE HETEROSTRUCTURES
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