DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE

被引：80

作者：

GREINER, ME ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5181 / 5191

页数：11

共 50 条

[1] ELECTRICAL-PROPERTIES OF EPITAXIAL SILICON-DOPED GALLIUM-ARSENIDE FILMS
MILVIDSKII, MG
SOLOVEVA, EV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 325 - 328
[2] LUMINESCENCE OF SILICON-DOPED EPITAXIAL GALLIUM-ARSENIDE
ARNAUDOV, BG
BYKOVSKII, VA
DOMANEVSKII, DS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 134 - 135
[3] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE INGOTS
MARTIN, S
JACOB, G
ACTA ELECTRONICA, 1983, 25 (02): : 123 - 132
[4] ELECTRICAL-PROPERTIES OF NUCLEAR DOPED EPITAXIAL LAYERS OF GALLIUM-ARSENIDE
KARPOVICH, LM
KORSHUNOV, FP
SOLODOVNIKOV, ES
UTENKO, VI
FOTIN, AV
SHOKH, VF
DOKLADY AKADEMII NAUK BELARUSI, 1992, 36 (11-12): : 982 - 984
[5] PHOTOLUMINESCENCE AND ELECTRICAL-PROPERTIES OF NEUTRON TRANSMUTATION-DOPED GALLIUM-ARSENIDE
KORSHUNOV, FP
PROKHORENKO, TA
KURILOVICH, NF
KOLIN, NG
SOBOLEV, NA
SHERAUKHOV, VA
DOKLADY AKADEMII NAUK BELARUSI, 1987, 31 (08): : 695 - 698
[6] ON SILICON-DOPED GALLIUM-ARSENIDE UNDER HYDROSTATIC-PRESSURE
POTHIRAJ, R
RAMACHANDRAN, K
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 181 (02): : K45 - K48
[7] A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE
HUTCHINSON, PW
BALL, RK
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (02) : 406 - 416
[8] ELECTRICAL-PROPERTIES OF TELLURIUM-DOPED GALLIUM-ARSENIDE THIN-FILMS
ISLAM, MN
MITRA, SK
JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (02) : 151 - 153
[9] ELECTRICAL-PROPERTIES OF GALLIUM-ARSENIDE LAYERS DOPED BY IMPLANTATION OF CARBON-IONS
DANILOV, YA
KARMANOV, VT
PAVLOV, PV
PITIRIMOVA, EA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 971 - 974
[10] ELECTRICAL-PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE FILMS DOPED WITH ISOVALENT SB AND IN IMPURITIES
SOLOVEVA, EV
MILVIDSKII, MG
GANINA, NV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1161 - 1165

← 1 2 3 4 5 →