DIFFUSION AND ELECTRICAL-PROPERTIES OF SILICON-DOPED GALLIUM-ARSENIDE

被引：80

作者：

GREINER, ME ^{[1
]}

GIBBONS, JF ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.335253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5181 / 5191

页数：11

共 18 条

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[2]

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[4] INCOHERENT ANNEALING OF IMPLANTED LAYERS IN GAAS [J].

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[5] DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].

GREINER, ME ;

GIBBONS, JF .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752

[6] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

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[7]

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[8] THE EFFECT OF STRESS ON THE REDISTRIBUTION OF IMPLANTED IMPURITIES IN GAAS [J].

KASAHARA, J ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) :2275-2279

[9]

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[10]

KOYAMA K, 1981, OCT EL SOC FALL M DE, P738

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