ELECTROCHEMICAL BEHAVIOR OF GROWN OXIDE FILMS ON SILICON

被引：12

作者：

COLLINS, FC

机构：

来源：

关键词：

D O I：

10.1149/1.2423696

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：786 / &

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[8]

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[9] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

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[10] EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES [J].

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