EFFECT OF THE SILICON DOPING CONCENTRATION ON THE RECOMBINATION KINETICS OF DX CENTERS IN AL0.35GA0.65AS

被引：42

作者：

CASWELL, NS

MOONEY, PM

WRIGHT, SL

SOLOMON, PM

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 16期

关键词：

D O I：

10.1063/1.96608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1093 / 1095

页数：3

共 9 条

[1]

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[6]

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[7]

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[8]

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[9] RESONANT EXCITATION OF BOUND EXCITON LUMINESCENCE IN GAAS1-XPX ALLOYS [J].

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