INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS

被引：49

作者：

GAWORZEWSKI, P

HILD, E

KIRSCHT, FG

VECSERNYES, L

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

[2] RES INST TELECOMMUN,H-1525 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 01期

关键词：

D O I：

10.1002/pssa.2210850116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of IR spectroscopic as well HVTEM investigations are given on the precipitation of oxygen in Si due to heat treatment within the temperature range 600 to 1275 degree C. Four different kinds of precipitates exist, in dependence on the temperature of heat treatment and the thermal history of the samples. For temperatures T greater than equivalent to 900 degree C precipitation occurs by the growth of as-grown microprecipitates.

引用

页码：133 / 147

页数：15

共 35 条

[1] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON [J].

BINNS, MJ ;

BROWN, WP ;

WILKES, JG ;

NEWMAN, RC ;

LIVINGSTON, FM ;

MESSOLORAS, S ;

STEWART, RJ .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :525-527

[2] THE INFLUENCE OF THERMAL POINT-DEFECTS ON THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

VANDEWIJGERT, WM .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :888-890

[3]

FARMER VC, 1974, INFRARED SPECTRA MIN, pCH15

[4] PRECIPITATION OF OXYGEN IN SILICON [J].

FREELAND, PE ;

JACKSON, KA ;

LOWE, CW ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :31-33

[5] OPTICAL-CONSTANTS OF QUARTZ, VITREOUS SILICA AND NEUTRON-IRRADIATED VITREOUS SILICA(I) [J].

GASKELL, PH ;

JOHNSON, DW .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :153-169

[6] OXYGEN-RELATED DONORS FORMED AT 600-DEGREES-C IN SILICON IN DEPENDENCE ON OXYGEN AND CARBON CONTENT [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02) :571-582

[7] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

GRAFF, K ;

GRALLATH, E ;

ADES, S ;

GOLDBACH, G ;

TOLG, G .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893

[8] INFRARED-ABSORPTION SPECTRA OF SIO2 PRECIPITATES OF VARIOUS SHAPES IN SILICON - CALCULATED AND EXPERIMENTAL [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5945-5948

[9] THERMALLY INDUCED MICRODEFECTS IN CZOCHRALSKI-GROWN SILICON - NUCLEATION AND GROWTH-BEHAVIOR [J].

KISHINO, S ;

MATSUSHITA, Y ;

KANAMORI, M ;

IIZUKA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :1-12

[10] CARBON AND OXYGEN ROLE FOR THERMALLY INDUCED MICRODEFECT FORMATION IN SILICON-CRYSTALS [J].

KISHINO, S ;

MATSUSHITA, Y ;

KANAMORI, M .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :213-215

← 1 2 3 4 →