CONTROLLED BARRIER HEIGHT INP SCHOTTKY DIODES PREPARED BY SULFUR DIFFUSION

被引：9
作者：
COLEMAN, JJ [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 04期
关键词：
D O I：
10.1063/1.89663
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：283 / 285
页数：3
相关论文
共 50 条
  • [21] Barrier height enhancement and stability of the Au/n-InP Schottky barrier diodes oxidized by absorbed water vapor
    Çetin, H
    Ayyildiz, E
    Türüt, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (06): : 2436 - 2443
  • [22] INFLUENCE OF BARRIER HEIGHT DISTRIBUTION ON THE PARAMETERS OF SCHOTTKY DIODES
    DOBROCKA, E
    OSVALD, J
    APPLIED PHYSICS LETTERS, 1994, 65 (05) : 575 - 577
  • [23] BARRIER HEIGHT MODIFICATION OF METAL GERMANIUM SCHOTTKY DIODES
    HAN, CC
    MARSHALL, ED
    FANG, F
    WANG, LC
    LAU, SS
    VOREADES, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1662 - 1666
  • [24] DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES
    AYTAC, S
    SCHLACHETZKI, A
    SOLID-STATE ELECTRONICS, 1982, 25 (11) : 1135 - &
  • [25] The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes
    Biber, M
    Güllü, Ö
    Forment, S
    Van Meirhaeghe, RL
    Türüt, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (01) : 1 - 5
  • [26] METHOD OF FORMING SCHOTTKY-BARRIER DIODES WITH VARIABLE BARRIER HEIGHT
    BHATIA, HS
    SCHNITZEL, RH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C96 - C96
  • [27] A NEW TECHNIQUE FOR THE DETERMINATION OF BARRIER HEIGHT OF SCHOTTKY-BARRIER DIODES
    CHATTOPADHYAY, P
    SOLID-STATE ELECTRONICS, 1995, 38 (03) : 739 - 741
  • [28] Determination of lateral barrier height of identically prepared Ni/n-type Si Schottky barrier diodes by electrodeposition
    Gueler, G.
    Guellue, Oe.
    Bakkaloglu, Oe. F.
    Tueruet, A.
    PHYSICA B-CONDENSED MATTER, 2008, 403 (13-16) : 2211 - 2214
  • [29] NOVEL SCHOTTKY DIODE WITH CONTROLLED BARRIER HEIGHT
    KAJIYAMA, K
    IDA, M
    SAKATA, S
    MIZUSHIMA, Y
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 244 - 245
  • [30] CHARACTERISTICS OF INP MIS SCHOTTKY DIODES PREPARED BY PLASMA OXIDATION
    IMAI, Y
    ISHIBASHI, T
    IDA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (01) : 221 - 224
12345