STRUCTURAL AND TECHNOLOGICAL PROPERTIES OF HEAVILY INSITU PHOSPHORUS-DOPED LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS

被引：10
作者：
BIELLEDASPET, D
MERCADERE, L
BOUKEZZATA, M
PIERAGGI, B
DEMAUDUIT, B
机构：
[1] CNRS,UNITE RECH 445,ECOLE NATL SUPER CHIM TOULOUSE,MET PHYS LAB,F-31062 TOULOUSE,FRANCE
[2] UNIV TOULOUSE 3,CNRS,UNITE RECH 799,MICROSCOPIE & STRUCT MAT LAB,F-31062 TOULOUSE,FRANCE
来源：
THIN SOLID FILMS | 1989年 / 175卷
关键词：
D O I：
10.1016/0040-6090(89)90806-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：43 / 48
页数：6
相关论文
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