SILICON AND SELENIUM DOPING EFFECTS ON BAND-GAP ENERGY AND SUBLATTICE ORDERING IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：40
作者：
GOMYO, A
HOTTA, H
HINO, I
KAWATA, S
KOBAYASHI, K
SUZUKI, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 08期
关键词：
D O I：
10.1143/JJAP.28.L1330
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L1330 / L1333
页数：4
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