SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW

被引:92
作者
JASTRZEBSKI, L
机构
关键词
D O I
10.1016/0022-0248(83)90164-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:493 / 526
页数:34
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共 63 条
[1]  
ALEXANDER EG, 1966, T METALL SOC AIME, V236, P284
[2]   CHEMICAL VAPOR-DEPOSITION APPLICATIONS IN MICROELECTRONICS PROCESSING [J].
BEAN, KE .
THIN SOLID FILMS, 1981, 83 (02) :173-186
[3]   EPICON CAMERA TUBE - EPITAXIAL DIODE ARRAY VIDICON [J].
BLUMENFELD, SM ;
ELLIS, GW ;
REDINGTON, RW ;
WILSON, RH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (11) :1036-+
[4]  
BRAN PD, 1978, J CRYST GROWTH, V45, P118
[5]   LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES [J].
CELLER, GK .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :429-444
[6]   NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :194-202
[7]   THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .2. THE SIH2CL2-H2-N2 SYSTEM [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1836-1843
[8]   THE NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .3. THE SIH4-HCL-H2 SYSTEM AT LOW-TEMPERATURES [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1353-1359
[9]  
CLAASSEN WAP, 1981, SEMICONDUCTOR SILICO
[10]  
COHEN C, 1982, ELECTRONICS 0922, P85