ELECTRON-SPIN SUSCEPTIBILITY IN N-TYPE SILICON BETWEEN 0.015 AND 1K

被引：0
|
作者：
MCCOY, RJ [1 ]
HONIG, A [1 ]
机构：
[1] SYRACUSE UNIV,SYRACUSE,NY
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1975年 / 20卷 / 04期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：697 / 697
页数：1
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