ELECTRON-SPIN SUSCEPTIBILITY IN N-TYPE SILICON BETWEEN 0.015 AND 1K

被引：0

作者：

MCCOY, RJ ^{[1
]}

HONIG, A ^{[1
]}

机构：

[1] SYRACUSE UNIV,SYRACUSE,NY

来源：

BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1975年 / 20卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：697 / 697

页数：1

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