THE EFFECT OF ISOLATED DISLOCATIONS ON SUBSTRATE AND DEVICE PROPERTIES IN LOW-DISLOCATION CZOCHRALSKI GAAS

被引：7

作者：

HUNTER, AT

KIMURA, H

OLSEN, HM

WINSTON, HV

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期

关键词：

D O I：

10.1007/BF02659634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：215 / 219

页数：5

共 9 条

[1] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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CHEN, RT ;

ELLIOTT, KR ;

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[2] SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :305-307

[3] SPATIALLY RESOLVED LUMINESCENCE NEAR DISLOCATIONS IN IN-ALLOYED CZOCHRALSKI-GROWN GAAS [J].

HUNTER, AT .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :715-718

[4] EFFECT OF DISLOCATIONS ON SHEET CARRIER CONCENTRATION OF SI-IMPLANTED, SEMI-INSULATING, LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS [J].

HYUGA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02) :L160-L162

[5] LOW-DISLOCATION INDIUM-ALLOYED GAAS [J].

KIMURA, H ;

AFABLE, CB ;

OLSEN, HM ;

HUNTER, AT ;

WINSTON, HV .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :185-190

[6] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[7]

MIYAZAWA S, 1983, APPL PHYS LETT, V43, P305

[8]

Winston H. V., 1985, Gallium Arsenide and Related Compounds 1984. Eleventh International Symposium, P497

[9] SUBSTRATE EFFECTS ON THE THRESHOLD VOLTAGE OF GAAS FIELD-EFFECT TRANSISTORS [J].

WINSTON, HV ;

HUNTER, AT ;

OLSEN, HM ;

BRYAN, RP ;

LEE, RE .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :447-449

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