D-BAND SUBHARMONIC MIXER WITH SILICON PLANAR DOPED BARRIER DIODES

被引：0

作者：

GUTTICH, U ^{[1
]}

STROHM, KM ^{[1
]}

SCHAFFLER, F ^{[1
]}

机构：

[1] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 02期

关键词：

D O I：

10.1109/22.102987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A subharmonically pumped mixer for RF frequencies in the D-band range has been realized applying silicon planar doped barrier (PDB) diodes grown by molecular beam epitaxy (MBE). Excellent RF performance data have been achieved with a finline/microstrip mixer design.

引用

页码：366 / 368

页数：3

共 7 条

[1]

DIXON S, 1983, 8TH P C INFR MILL WA

[2] AN INDUSTRIAL SINGLE-SLICE SI-MBE APPARATUS [J].