ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS

被引：50
作者：
EGLASH, SJ
NEWMAN, N
PAN, S
MO, D
SHENAI, K
SPICER, WE
PONCE, FA
COLLINS, DM
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
[2] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 11期
关键词：
D O I：
10.1063/1.338290
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5159 / 5169
页数：11
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