RADIATIONLESS ELECTRONIC RELAXATION OF THE F-CENTER IN NAI

被引:1
|
作者
DEMATTEIS, F [1 ]
LEBLANS, M [1 ]
SCHOEMAKER, D [1 ]
机构
[1] UNIV INSTELLING ANTWERP,DEPT PHYS,UNIV PLEIN 1,B-2610 WILRIJK,BELGIUM
关键词
D O I
10.1016/0022-2313(94)90217-8
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The temperature dependence of the ground-state recovery of the F-center in NaI after optical excitation is studied with a pump-probe laser technique. At 10 K the lifetime of the relaxed excited state (tens of ns) is identified together with a much smaller 10 ps contribution possibly related to the Dexter-Klick-Russell cross-over process.
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页码:563 / 565
页数:3
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