EPR STUDIES OF DEFECTS IN ELECTRON-IRRADIATED SILICON - TRIPLET-STATE OF VACANCY-OXYGEN COMPLEXES

被引：243

作者：

LEE, YH ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY, DEPT PHYS, ALBANY, NY 12222 USA

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.13.2653

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2653 / 2666

页数：14

共 46 条

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[5]

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[6]

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[7]

Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031

[8] O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON [J].

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PHYSICAL REVIEW B, 1972, 5 (11) :4274-&

[9] ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON [J].

BROWER, KL ;

VOOK, FL ;

BORDERS, JA .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :208-&

[10] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1971, 4 (06) :1968-&

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