AUGER RECOMBINATION + IMPACT IONIZATION INVOLVING TRAPS IN SEMICONDUCTORS

被引：76

作者：

LANDSBERG, PT

LAL, P

RHYSROBERTS, C

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1964年 / 84卷 / 5426期

关键词：

D O I：

10.1088/0370-1328/84/6/311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：915 / &

共 18 条

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[4]

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[5]

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[8]

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[10] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J].

EVANS, DA ;

LANDSBERG, PT .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :169-181

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