RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS

被引：27
|
作者：
HAN, LK
BHAT, M
WRISTERS, D
WANG, HH
KWONG, DL
机构：
[1] Microelectronics research center department of electrical, computer engineering the university of texas at austin, Austin
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0167-9317(95)00022-Z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reviews recent developments in N2O- and NO-based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are extremely attractive due to their process simplicity, thickness controllability, and excellent electrical characteristics. In this paper, several issues like thickness scaling, growth kinetics, chemical composition, electrical properties, hot-carrier reliability, and EEPROM applications of these dielectrics are discussed.
引用
收藏
页码：89 / 96
页数：8
相关论文
共 50 条
  • [21] Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
    Noh, Yong-Young
    Sirringhaus, Henning
    ORGANIC ELECTRONICS, 2009, 10 (01) : 174 - 180
  • [22] New findings NBTI in partially depleted SOI transistors with ultra-thin gate dielectrics
    Zhang, J
    Marathe, A
    Taylor, K
    Zhao, E
    En, B
    2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 2004, : 687 - 688
  • [23] Enabling single-wafer process technologies for reliable ultra-thin gate dielectrics
    Miner, G
    Xing, GC
    Joo, HS
    Sanchez, E
    Yokota, Y
    Chen, CL
    Lopes, D
    Balakrishna, A
    ADVANCES IN RAPID THERMAL PROCESSING, 1999, 99 (10): : 3 - 14
  • [24] COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES
    BENISTANT, F
    MONDON, F
    MARTIN, F
    GUEGAN, G
    MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 105 - 108
  • [25] Improved method for the oxide thickness extraction in MOS structures with ultra-thin gate dielectrics
    Ghibaudo, G.
    Bruyere, S.
    Devoivre, T.
    DeSalvo, B.
    Vincent, E.
    IEEE International Conference on Microelectronic Test Structures, 1999, : 111 - 116
  • [26] Investigation of the growth and chemical stability of composite metal gates on ultra-thin gate dielectrics
    Claflin, B
    Binger, M
    Lucovsky, G
    Yang, HY
    SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, 1998, 532 : 171 - 176
  • [27] Error evaluation of C-V characteristic measurements in ultra-thin gate dielectrics
    Suto, H
    Inaba, S
    Ishimaru, K
    ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 2004, : 221 - 226
  • [28] Investigation of stress induced leakage current in CMOS structures with ultra-thin gate dielectrics
    Jahan, C
    Barla, K
    Ghibaudo, G
    MICROELECTRONICS AND RELIABILITY, 1997, 37 (10-11): : 1529 - 1532
  • [29] NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications
    Chung, HYA
    Dietl, W
    Niess, J
    Nényei, Z
    Lerch, W
    Wieczorek, K
    Krumm, N
    Ludsteck, A
    Eisele, I
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 55 - 59
  • [30] Reliability characterization of ultra-thin film dielectrics
    Suehle, JS
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 115 - 119
12345