EBIC AND AFM STUDIES OF REACTIVE ION AND REACTIVE ION-BEAM ETCHED SILICON FOR DAMAGE DEPTH RESEARCH

The Planar Electron Beam Induced Current (PEBIC) mode of a Secondary Electron Microscope (SEM) is used to study the active electrical defects in silicon created by Reactive Ion Etching (RIE) and Reactive Ion Beam Etching (RIBE) processes. There is found to be a reduction in the EBIC signal from the etched areas. Because of the differences in the EBIC signals, the EBIC image received from a scan across the sample reflects the geometric etch mask. In conjunction with the exact geometric structure of the etched sample as determined by Atomic Force Microscope (AFM) measurements, the maximum lateral damage depth can be measured. The influence of the etch parameters on the etch damage is discussed.