CO-60 GAMMA-RAY AND ELECTRON DISPLACEMENT DAMAGE STUDIES OF SEMICONDUCTORS

被引：48
作者：
XAPSOS, MA
SUMMERS, GP
BLATCHLEY, CC
COLERICO, CW
BURKE, EA
MESSENGER, SR
SHAPIRO, P
机构：
[1] UNIV MARYLAND,DEPT PHYS,BALTIMORE,MD 21228
[2] SPIRE CORP,BEDFORD,MA 01730
[3] SFA INC,LANDOVER,MD 20785
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期
关键词：
D O I：
10.1109/23.340528
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A general method for relating Co-60 gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on the concept of effective ''displacement damage dose'', which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss.
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页码：1945 / 1949
页数：5
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