RAMAN-SCATTERING BY COUPLED PLASMON-PHONON MODES IN N-TYPE GA1-XALXAS EPITAXIAL LAYERS

被引：17
|
作者：
KIRILLOV, D
CHAI, Y
WEBB, C
DAVIS, G
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.336869
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：231 / 233
页数：3
相关论文
共 50 条
  • [31] Raman scattering by coupled phonon-plasmon modes
    Falkovsky, LA
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 613 - 616
  • [32] RAMAN-SCATTERING SPECTRA OF COUPLED LO-PHONON-HOLE-PLASMON MODES IN P-TYPE GAAS
    FUKASAWA, R
    PERKOWITZ, S
    PHYSICAL REVIEW B, 1994, 50 (19): : 14119 - 14124
  • [33] RAMAN-SCATTERING FROM COUPLED PLASMON LO-PHONON MODES IN NORMAL-TYPE ALXGA1-XAS
    YUASA, T
    NARITSUKA, S
    MANNOH, M
    SHINOZAKI, K
    YAMANAKA, K
    NOMURA, Y
    MIHARA, M
    ISHII, M
    PHYSICAL REVIEW B, 1986, 33 (02): : 1222 - 1232
  • [34] PLASMON-PHONON EXCITATION IN N-TYPE GALLIUM-ARSENIDE
    BOGDANOVA, VA
    LYUZE, LL
    SEMIKOLENOVA, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (10): : 1176 - 1177
  • [35] RAMAN-SCATTERING BY THE COUPLED PLASMON LO-PHONON MODES NEAR THE E0+DELTA-0 GAP OF N-TYPE GAAS - RESONANCE AND INTERFERENCE EFFECTS
    VORLICEK, V
    GREGORA, I
    KAUSCHKE, W
    MENENDEZ, J
    CARDONA, M
    PHYSICAL REVIEW B, 1990, 42 (09) : 5802 - 5808
  • [36] Raman scattering by LO phonon-plasmon coupled modes in heavily doped Ga(AsN)
    Ibáñez, J
    Cuscó, R
    Artús, L
    Fowler, D
    Patanè, A
    Eaves, L
    Uesugi, K
    Suemune, I
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 293 - 294
  • [37] INFRARED REFLECTIVITY STUDIES OF THE COUPLED PLASMON-PHONON MODES IN N-GAAS
    CHANDRASEKHAR, HR
    RAMDAS, AK
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 310 - 310
  • [38] INFRARED EMITTANCE AND PLASMON-PHONON COUPLING IN DOPED N-TYPE GASB
    STIERWALT, DL
    NEDOLUHA, A
    SOLID STATE COMMUNICATIONS, 1970, 8 (05) : 309 - +
  • [39] MOCVD GROWTH OF GAAS/GA1-XALXAS EPITAXIAL LAYERS FOR MONOLITHIC OPTOELECTRONIC DEVICES
    JONES, MW
    FORBES, N
    JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 466 - 473
  • [40] ALLOY SCATTERING POTENTIAL IN PARA-TYPE GA1-XALXAS
    MASU, K
    TOKUMITSU, E
    KONAGAI, M
    TAKAHASHI, K
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5785 - 5792
12345