RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS

被引：37

作者：

PEARTON, SJ ^{[1
]}

HULL, R ^{[1
]}

JACOBSON, DC ^{[1
]}

POATE, JM ^{[1
]}

WILLIAMS, JS ^{[1
]}

机构：

[1] ROYAL MELBOURNE INST TECHNOL,CTR MICROELECTR TECHNOL,MELBOURNE,VIC 3000,AUSTRALIA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.96754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：38 / 40

页数：3

共 16 条

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[2]

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[3]

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STREETMAN, BG .

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[7] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :831-&

[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

MIYAZAWA, S ;

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[9]

ORMONROSSITER KG, 1985, NUCL INSTRUM METHO B, V7, P448

[10]

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