PLANAR EPITAXIAL AVALANCHE PHOTODIODES WITH ENHANCED BLUE SENSITIVITY FOR SCINTILLATION DETECTORS

被引：1

作者：

BOSLAU, O

VONMUNCH, W

机构：

[1] Institut für Halbleitertechnik, University of Stuttgart, Stuttgart

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 22卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(89)80037-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An avalanche photodiode based on epitaxial silicon material is described. A quantum efficiency of about 60% at a wavelength λ = 400 nm was obtained. Alpha particles with an energy of 5.48 MeV were detected by a combination of a CaF2:Eu crystal and an avalanche photodiode. The simplicity of the fabrication process, which requires only three masking steps, allows the generation of a linear array of avalanche photodiodes. © 1990.

引用

页码：570 / 573

页数：4

共 4 条

[1]

HWANG KW, 1984, IEEE T ELECTRON DEV, V31, P1126, DOI 10.1109/T-ED.1984.21675

[2] SCINTILLATION DETECTION WITH LARGE-AREA REACH-THROUGH AVALANCHE PHOTODIODES [J].