HIGH TRANSCONDUCTANCE AND LARGE PEAK-TO-VALLEY RATIO OF NEGATIVE DIFFERENTIAL CONDUCTANCE IN 3-TERMINAL INGAAS INALAS REAL-SPACE TRANSFER DEVICES

Three-terminal real-space transfer devices with improved room-temperature characteristics have been implemented in InGaAs/InAlAs/InGaAs heterostructures lattice matched to InP. The devices exhibit extremely sharp charge injection, characterized by a transconductance exceeding 23 S/mm and a negative differential conductance with a peak-to-peak ratio of over 7000. Our experiments suggest that both of these characteristics are limited only by the dielectric strength of the InAlAs barrier layer.