Ab initio study on gas sensing properties of group III (B, Al and Ga) doped graphene
被引:38
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作者:
Varghese, Seba Sara
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机构:
Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
Petr Inst, Dept Chem Engn, Abu Dhabi, U Arab EmiratesBirla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
Varghese, Seba Sara
[1
,2
]
Swaminathan, Sundaram
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机构:
Dehradun Inst Technol Univ, Dehra Dun, Uttar Pradesh, IndiaBirla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
Swaminathan, Sundaram
[3
]
Singh, Krishna Kumar
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机构:
Birla Inst Technol & Sci Pilani, Dept Phys, Dubai Campus, Dubai, U Arab EmiratesBirla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
Singh, Krishna Kumar
[4
]
Mittal, Vikas
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机构:
Petr Inst, Dept Chem Engn, Abu Dhabi, U Arab EmiratesBirla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
Mittal, Vikas
[2
]
机构:
[1] Birla Inst Technol & Sci Pilani, Dept Elect & Elect Engn, Dubai Campus, Dubai, U Arab Emirates
[2] Petr Inst, Dept Chem Engn, Abu Dhabi, U Arab Emirates
[3] Dehradun Inst Technol Univ, Dehra Dun, Uttar Pradesh, India
[4] Birla Inst Technol & Sci Pilani, Dept Phys, Dubai Campus, Dubai, U Arab Emirates
Group III doped graphene;
Gas sensor;
Adsorption;
Density functional theory;
Water vapour;
Electronic properties;
D O I:
10.1016/j.cocom.2016.09.004
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
The adsorptions of small gas molecules (CO, NO and NO2) on group III (B, Al and Ga) doped graphene are investigated using ab initio density functional theory calculations, to exploit the potential applications of graphene as toxic gas sensors. For enabling practical gas sensing applications, the effect of water vapour on the sensing properties of these doped graphenes are also studied. The most stable geometries of gas molecules on these doped graphenes are determined and the adsorption energies are calculated. Our results show that the structural and electronic properties of B-doped graphene are sensitive to NO and NO2, but not influenced by the adsorption of CO and H2O. The chemisorptions of CO, NO, NO2 and H2O on Al- and Ga-doped graphene were evident from large adsorption energies, large charge transfers and were confirmed by analysis of band structures and density of states. Hence Al- and Ga-doped graphenes can be used as good sensors for detecting CO, NO and NO2. The calculations also indicate that B-doped graphene can be used as an excellent gas sensing platform for detecting NO and NO2, whereas Al- and Ga-doped graphene may not be suitable choices for harmful gas detection, in the presence of water vapour. (C) 2016 The Authors. Published by Elsevier B.V.
机构:
Bursa Tech Univ, Dept Chem Engn, Mimar Sinan Campus, TR-16310 Bursa, TurkeyBursa Tech Univ, Dept Chem Engn, Mimar Sinan Campus, TR-16310 Bursa, Turkey
Serincay, Nazmiye
Fellah, M. Ferdi
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Bursa Tech Univ, Dept Chem Engn, Mimar Sinan Campus, TR-16310 Bursa, TurkeyBursa Tech Univ, Dept Chem Engn, Mimar Sinan Campus, TR-16310 Bursa, Turkey
机构:
Harbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R ChinaHarbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R China
Li, Yuanchao
Xu, Yanling
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机构:
Harbin Inst Technol, Sch Chem & Chem Engn, Harbin 150090, Peoples R ChinaHarbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R China
Xu, Yanling
Li, Xin
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机构:
Harbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R ChinaHarbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, State Key Lab Urban Water Resource & Environm, Harbin 150090, Peoples R China
机构:
Shang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R ChinaShang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China
Luo, M.
Shen, Y. H.
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机构:
East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R ChinaShang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China
Shen, Y. H.
Yin, T. L.
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机构:
East China Normal Univ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China
Nantong Univ, Sch Elect & Informat, Nantong 226019, Peoples R ChinaShang Hai Jian Qiao Univ, Dept Elect Engn, Shanghai 201306, Peoples R China