PHOTO-LUMINESCENCE MEASUREMENTS OF ZN-DOPED GA1-XALX AS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：28
|
作者：
XU, ZY
KREISMANIS, VG
TANG, CL
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 08期
关键词：
D O I：
10.1063/1.332654
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：4536 / 4542
页数：7
相关论文
共 50 条
  • [1] Zn-doped AlInAs grown at high temperature by metalorganic chemical vapor deposition
    Tateno, K
    Amano, C
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 393 - 400
  • [2] Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
    Feng, ZC
    Yang, TR
    Liu, R
    Wee, TSA
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (01) : 39 - 43
  • [3] EFFECTS OF RESIDUAL IMPURITIES ON ZN ELECTRICAL-ACTIVITY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    SUZUKI, M
    ISHIKAWA, M
    KOKUBUN, Y
    HATAKOSHI, G
    JOURNAL OF CRYSTAL GROWTH, 1992, 123 (1-2) : 181 - 187
  • [4] EFFECTS OF V III RATIO ON ZN ELECTRICAL-ACTIVITY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    SUGAWARA, H
    ISHIKAWA, M
    KOKUBUN, Y
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) : 728 - 732
  • [5] LATTICE-CONSTANT SHIFT IN ZN-DOPED INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    ISHIKAWA, M
    TSUBURAI, Y
    KOKUBUN, Y
    JOURNAL OF CRYSTAL GROWTH, 1990, 100 (1-2) : 63 - 67
  • [6] EFFECTS OF ZN ELECTRICAL-ACTIVITY ON BAND-GAP ENERGY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    ISHIKAWA, M
    TSUBURAI, Y
    KOKUBUN, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L2092 - L2094
  • [7] Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition
    Moon, Y
    Si, S
    Yoon, E
    Kim, SJ
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 2261 - 2265
  • [8] YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    UWAI, K
    NAKAGOME, H
    TAKAHEI, K
    APPLIED PHYSICS LETTERS, 1987, 50 (15) : 977 - 979
  • [9] CHEMICAL CHARACTERIZATION OF (IN,GA)AS/(AL,GA)AS STRAINED INTERFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KIM, J
    ALWAN, JJ
    FORBES, DV
    COLEMAN, JJ
    ROBERTSON, IM
    WAYMAN, CM
    BAUMANN, FH
    BODE, M
    KIM, Y
    OURMAZD, A
    APPLIED PHYSICS LETTERS, 1992, 61 (01) : 28 - 30
  • [10] BROAD LUMINESCENT BAND IN ZN-DOPED ALXGA1-XAS GROWN BY METAORGANIC CHEMICAL VAPOR-DEPOSITION
    SAKAMOTO, M
    OKADA, T
    MORI, Y
    KANEKO, K
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3613 - 3616
12345