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EFFECT OF THE INTERFACE OF N+-TYPE SUBSTRATE AND N-TYPE EPITAXIAL LAYER ON THE JUNCTION CAPACITANCE SPECTROSCOPY
被引:0
作者
:
DOZSA, L
论文数:
0
引用数:
0
h-index:
0
机构:
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
DOZSA, L
[
1
]
SMID, V
论文数:
0
引用数:
0
h-index:
0
机构:
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
SMID, V
[
1
]
MARES, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
MARES, JJ
[
1
]
HUBIK, P
论文数:
0
引用数:
0
h-index:
0
机构:
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
HUBIK, P
[
1
]
KRISTOFIK, J
论文数:
0
引用数:
0
h-index:
0
机构:
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
KRISTOFIK, J
[
1
]
机构
:
[1]
CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA
来源
:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
1987年
/ 104卷
/ 02期
关键词
:
D O I
:
10.1002/pssa.2211040259
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:K117 / K120
页数:4
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共 6 条
[1]
DLTS AND PHOTOLUMINESCENCE OF MBE GAAS GROWN IN THE PRESENCE OF HYDROGEN
BOSACCHI, A
论文数:
0
引用数:
0
h-index:
0
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ECOLE POLYTECH FED LAUSANNE,INST APPL PHYS,CH-1015 LAUSANNE,SWITZERLAND
BOSACCHI, A
FRANCHI, S
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h-index:
0
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ECOLE POLYTECH FED LAUSANNE,INST APPL PHYS,CH-1015 LAUSANNE,SWITZERLAND
AVANZINI, V
[J].
JOURNAL OF CRYSTAL GROWTH,
1987,
81
(1-4)
: 181
-
187
[2]
REAL AND APPARENT EFFECTS OF STRONG ELECTRIC-FIELDS ON THE ELECTRON-EMISSION FROM MIDGAP LEVELS EL2 AND EL0 IN GAAS
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LAGOWSKI, J
LIN, DG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
LIN, DG
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
GATOS, HC
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
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PARSEY, JM
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论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WARSAW,INST EXPTL PHYS,PL-00325 WARSAW,POLAND
KAMINSKA, M
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(01)
: 89
-
91
[3]
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LANG, DV
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
LANG, DV
[J].
JOURNAL OF APPLIED PHYSICS,
1974,
45
(07)
: 3023
-
3032
[4]
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LOSEE, DL
论文数:
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引用数:
0
h-index:
0
机构:
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
EASTMAN KODAK CO,RES LABS,ROCHESTER,NY 14650
LOSEE, DL
[J].
JOURNAL OF APPLIED PHYSICS,
1975,
46
(05)
: 2204
-
2214
[5]
OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY
MCAFEE, SR
论文数:
0
引用数:
0
h-index:
0
MCAFEE, SR
LANG, DV
论文数:
0
引用数:
0
h-index:
0
LANG, DV
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
TSANG, WT
[J].
APPLIED PHYSICS LETTERS,
1982,
40
(06)
: 520
-
522
[6]
ON THE ROLE OF THE BACK CONTACT IN DLTS EXPERIMENTS WITH SCHOTTKY DIODES
THURZO, I
论文数:
0
引用数:
0
h-index:
0
机构:
SLOVAK ACAD SCI, INST ELECTROENGN, CS-80936 BRATISLAVA, CZECHOSLOVAKIA
SLOVAK ACAD SCI, INST ELECTROENGN, CS-80936 BRATISLAVA, CZECHOSLOVAKIA
THURZO, I
DUBECKY, F
论文数:
0
引用数:
0
h-index:
0
机构:
SLOVAK ACAD SCI, INST ELECTROENGN, CS-80936 BRATISLAVA, CZECHOSLOVAKIA
SLOVAK ACAD SCI, INST ELECTROENGN, CS-80936 BRATISLAVA, CZECHOSLOVAKIA
DUBECKY, F
[J].
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,
1985,
89
(02):
: 693
-
698
←
1
→