EPITAXIAL GROWTH OF BULK-QUALITY GALLIUM ARSENIDE ON GALLIUM ARSENIDE AND GERMANIUM SUBSTRATES

被引：2

作者：

BOBB, LC

HOLLOWAY, H

MAXWELL, KH

机构：

来源：

关键词：

D O I：

10.1063/1.1707949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3909 / &

共 8 条

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EFFER, D .

[2]

GOLDSMITH N, 1964, J ELECTROCHEM SOC, V111, P585

HOLLOWAY, H ;

WOLLMANN, K ;

JOSEPH, AS .

PHILOSOPHICAL MAGAZINE, 1965, 11 (110) :263-&

[4]

ING SW, 1962, J ELECTROCHEM SOC, V109, P995

[5]

JAMES RW, 1948, OPTICAL PRINCIPLES D, P304

[6] GALLIUM-ARSENIDE DIFFUSED DIODES [J].

LOWEN, J ;

REDIKER, RH .

MOEST, RR ;

SHUPP, BR .

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243