SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：125
作者：
IYER, SS
METZGER, RA
ALLEN, FG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期
关键词：
D O I：
10.1063/1.329494
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5608 / 5613
页数：6
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