EDGE EMISSION OF ALXGA1-XN

被引：67

作者：

KHAN, MRH

KOIDE, Y

ITOH, H

SAWAKI, N

AKASAKI, I

机构：

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 60卷 / 06期

关键词：

D O I：

10.1016/0038-1098(86)90727-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：509 / 512

页数：4

共 17 条

[1] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[2] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1982, 25 (06) :3828-3840

[3]

GARBUZOV DZ, 1975, SOV PHYS SEMICOND+, V8, P998

[4] DISORDER EFFECTS ON FREE-EXCITONS IN CDS1-XSEX MIXED-CRYSTALS [J].

GOEDE, O ;

HENNIG, D ;

JOHN, L .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 96 (02) :671-681

[5] PROPERTIES AND ION-IMPLANTATION OF ALXGA1-XN EPITAXIAL SINGLE-CRYSTAL FILMS PREPARED BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, MA ;

SKOGMAN, RA ;

SCHULZE, RG ;

GERSHENZON, M .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :492-494

[6] EFFECT OF SI ON PHOTOLUMINESCENCE OF GAN [J].

KHAN, MRH ;

OHSHITA, Y ;

SAWAKI, N ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1986, 57 (06) :405-409

[7]

KOIDE Y, UNPUB

[8] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX [J].

LAI, S ;

KLEIN, MV .

PHYSICAL REVIEW LETTERS, 1980, 44 (16) :1087-1090

[9] LUMINESCENCE AND DIRECT EXPERIMENTAL-OBSERVATIONS OF BAND-STRUCTURE EFFECTS IN NITROGEN-DOPED GAXIN1-XP ALLOYS [J].

MARIETTE, H ;

CHEVALLIER, J .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1200-1205

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

← 1 2 →