A NEW SELF-ALIGNED GAAS-FET WITH A MO/WSIX T-GATE

被引：6
|
作者：
SUZUKI, M
KURIYAMA, Y
HIRAYAMA, M
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期
关键词：
D O I：
10.1109/EDL.1985.26223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：542 / 544
页数：3
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