COMPARISON OF 2D MEMORY SEU TRANSPORT SIMULATION WITH EXPERIMENTS

被引：23

作者：

FU, JS ^{[1
]}

WEAVER, HT ^{[1
]}

KOGA, R ^{[1
]}

KOLASINSKI, WA ^{[1
]}

机构：

[1] AEROSPACE CORP,LOS ANGELES,CA 90009

来源：

关键词：

D O I：

10.1109/TNS.1985.4334083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4145 / 4149

页数：5

共 7 条

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DZIEWIOR, J
SCHMID, W
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348
[2] Fu J. S., 1985, 1985 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers, P245
[3] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES
FU, JS
AXNESS, CL
WEAVER, HT
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1155 - 1160
[4] MEMORY SEU SIMULATIONS USING 2-D TRANSPORT CALCULATIONS
FU, JS
AXNESS, CL
WEAVER, HT
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (08) : 422 - 424
[5] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES
HSIEH, CM
MURLEY, PC
OBRIEN, RR
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 103 - 105
[6] MOCK MS, 1981, NUMERICAL ANAL SEMIC
[7] Momose H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P706