AN EXPLANATION FOR THE RISE IN TC IN THE TL-BASED AND BI-BASED HIGH-TEMPERATURE SUPERCONDUCTORS

被引：10

作者：

BOSE, SM ^{[1
]}

LONGE, P ^{[1
]}

机构：

[1] UNIV LIEGE,SUPRAS,INST PHYS,B-4000 LIEGE,BELGIUM

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1990年 / 2卷 / 10期

关键词：

D O I：

10.1088/0953-8984/2/10/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the plasmon exchange model for the high-Tc superconductor, the authors show that the Tc rises with an increase in the number of CuO layers per unit cell, which is in agreement with recent observations in the Tl- and Bi-based compounds. Their calculation also shows that there is a saturation effect, i.e. that Tc cannot be raised indefinitely by increasing the number of CuO layers.

引用

页码：2491 / 2496

页数：6

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