HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION

被引：105

作者：

SASAKI, K

SAKUMA, E

MISAWA, S

YOSHIDA, S

GONDA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.94973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：72 / 73

页数：2

共 10 条

[1] ELECTRON MOBILITY MEASUREMENTS IN SIC POLYTYPES [J].

BARRETT, DL ;

CAMPBELL, RB .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :53-+

[2]

Choyke W. J., 1974, SILICON CARBIDE 1973, P261

[3]

KANG H, 1974, SILICON CARBIDE 1973, P493

[4] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J].

NELSON, WE ;

HALDEN, FA ;

ROSENGREEN, A .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :333-+

[5] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[6]

NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[7] ELECTRON MOBILITIES IN SIC POLYTYPES [J].

PATRICK, L .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) :50-&

[8] HIGH ELECTRON MOBILITY OF CUBIC SIC [J].

PATRICK, L .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4911-&

[9]

van Der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[10]

VANDAAL HJ, 1965, PHILIPS RES REP S, V3, P70

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