HIGH-TEMPERATURE ELECTRICAL-PROPERTIES OF 3C-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL VAPOR-DEPOSITION

被引：103

作者：

SASAKI, K

SAKUMA, E

MISAWA, S

YOSHIDA, S

GONDA, S

机构：

来源：

关键词：

D O I：

10.1063/1.94973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：72 / 73

页数：2

共 10 条

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