INTRINSIC STRAIN AT LATTICE-MATCHED GA0.47IN0.53AS/INP INTERFACES AS STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION

被引：49
作者：
VANDENBERG, JM
PANISH, MB
TEMKIN, H
HAMM, RA
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 20期
关键词：
D O I：
10.1063/1.100345
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1920 / 1922
页数：3
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[5]   HIGH-RESOLUTION X-RAY-DIFFRACTION STUDIES OF INGAAS(P)/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
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