ANOMALOUS CURRENT DISTRIBUTIONS IN POWER TRANSISTORS

被引：2
作者：
BOSCH, G [1 ]
机构：
[1] PHILIPS GLOEILAMPENFABRIEKEN NV,EINDHOVEN,NETHERLANDS
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期
关键词：
D O I：
10.1016/0038-1101(77)90104-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：635 / 640
页数：6
相关论文
共 4 条
[1]   SECOND BREAKDOWN OF IC STRUCTURED POWER TRANSISTORS [J].
DEMIZU, K ;
YAMAMOTO, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (06) :352-353
[2]   AVALANCHE INJECTION AND SECOND BREAKDOWN IN TRANSISTORS [J].
HOWER, PL ;
REDDI, VGK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (04) :320-+
[3]   COMPARISON OF ONE-DIMENSIONAL AND 2-DIMENSIONAL MODELS OF TRANSISTOR THERMAL INSTABILITY [J].
HOWER, PL ;
GOVIL, PK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (10) :617-623
[4]   THERMAL INSTABILITY IN POWER TRANSISTOR STRUCTURES [J].
NAVON, D ;
MILLER, EA .
SOLID-STATE ELECTRONICS, 1969, 12 (02) :69-+
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