OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：14
作者：
HAYES, JR
BHAT, R
SCHUMACHER, H
KOZA, M
机构：
[1] Bell Communications Research Inc,, Red Bank, NJ, USA, Bell Communications Research Inc, Red Bank, NJ, USA
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 24期
关键词：
CURRENT DENSITIES - CURRENT GAINS - EMITTER-BASE JUNCTION - OMCVD;
D O I：
10.1049/el:19870898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1298 / 1299
页数：2
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[1]   OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
HAYES, JR ;
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[4]   INGAAS PHOTODIODES PREPARED BY LOW-PRESSURE MOCVD [J].
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ELECTRONICS LETTERS, 1985, 21 (10) :441-442
[5]   VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].
RAZEGHI, M ;
HERSEE, S ;
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BLONDEAU, R ;
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DUCHEMIN, JP .
ELECTRONICS LETTERS, 1983, 19 (09) :336-337
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