HYDROGEN IN SEMICONDUCTORS - CRYSTAL-GROWTH AND DEVICE PROCESSING

被引：15
作者：
PEARTON, S
STAVOLA, M
CORBETT, JW
机构：
[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015
[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
来源：
ADVANCED MATERIALS | 1992年 / 4卷 / 05期
关键词：
D O I：
10.1002/adma.19920040503
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Hydrogen can have undesirable effects on the electrically active dopant profile in the near-surface region of semiconductors and thus influence the switching and transmission characteristics of devices. However, hydrogen is present in virtually every step during the processing of Si and III-V devices, forming passivating complexes with acceptors (bonding configuration, left) and donors (anti-bonding configuration, right). The inplantation, and diffusion of the hydrogen are followed using, for example, SIMS and infrared spectroscopy.
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页码：332 / 340
页数：9
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