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- [1] Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate ADVANCES IN NANODEVICES AND NANOFABRICATION, 2012, : 273 - 282
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- [3] Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1044 - 1047
- [9] Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy Journal of Electronic Materials, 1998, 27 : 1043 - 1046
- [10] Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells Journal of Superconductivity, 2003, 16 : 331 - 334