PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES

被引：18

作者：

FAIRFIELD, JM

SCHWUTTKE, GH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.1708563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1536 / +

页数：1

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