WIDE-BANDWIDTH DISTRIBUTED BRAGG REFLECTORS USING OXIDE GAAS MULTILAYERS

被引：123

作者：

MACDOUGAL, MH

ZHAO, H

DAPKUS, PD

ZIARI, M

STEIER, WH

机构：

[1] Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 14期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; VERTICAL CAVITY SURFACE EMITTING LASERS;

D O I：

10.1049/el:19940754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have designed and fabricated a wide bandwidth high reflectivity distributed Bragg reflector (DBR) using the native oxide of AlAs as the low refractive index layer and GaAs as the high refractive index layer. Results show that the refractive index of the native oxide is 1.55 +/- 0.01, the peak reflectivity of the DBR is over 99%, and the reflectivity bandwidth is approximately 460nm.

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页码：1147 / 1149

页数：3

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