HIGH-EFFICIENCY KU-BAND HBT MMIC POWER-AMPLIFIER

被引：4
|
作者：
BARTUSIAK, PJ
HENDERSON, T
KIM, T
BAYRAKTAROGLU, B
机构：
[1] Texas Instruments Incorporated, Dallas, TX
[2] College of Engineering, North Carolina State University, Raleigh, NC
来源：
IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 11期
关键词：
D O I：
10.1109/55.192847
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Ku-band monolithic HBT power amplifier was developed using a MOCVD-grown AlGaAs / GaAs heterojunction bipolar transistor (HBT) operating in common-emitter mode. At a 7.5-V collector bias, the amplifier produced 0.5-W CW output power with 5.0-dB gain and 42% power-added efficiency in the 15-16-GHz band. When operated at a single frequency (15 GHz), 0.66-W CW output power and 5.2 dB of gain was achieved with 43% PAE.
引用
收藏
页码：584 / 586
页数：3
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